sot23 npn silicon planar darlington transistors issue 4 - december 1996 complementary types - FMMTA12 ? none fmmta13 ? fmmta63 fmmta14 ? fmmta64 partmarking details ? FMMTA12 ? 3w fmmta13 ? 1m fmmta14 ? 1n absolute maximum ratings. parameter symbol FMMTA12 fmmta13/14 unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v collector-emitter voltage v ces 20 40 v emitter-base voltage v ebo 10 v continuous collector current i c 300 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-emitter FMMTA12 breakdown voltage fmmta13/14 v (br)ces 20 40 v v i c =100 m a, i b =0* i c =100 m a, i b =0* collector cut-off FMMTA12 current i ces 100 na v cb =15v, v be =0 collector cut-off FMMTA12 current fmmta13/14 i cbo 100 100 na na v cb =15v, i e =0 v cb =30v, i e =0 emitter cut-off current i ebo 100 na v eb =10v, i c =0 static forward FMMTA12 current transfer fmmta13 ratio fmmta13 fmmta14 fmmta14 h fe 20k 5k 10k 10k 20k i c =10ma, v ce =5v* i c =10ma, v ce =5v* i c =100ma, v ce =5v* i c =10ma, v ce =5v* i c =100ma, v ce =5v* collector-emitter FMMTA12 saturation voltage fmmta13/14 v ce(sat) 1.0 0.9 v v i c =10ma, i b =0.01ma i c =100ma, i b =0.1ma base-emitter FMMTA12 on voltage fmmta13/14 v be(on) 1.4 2.0 v v i c =10ma, v ce =5v* i c =100ma,v ce =5v* *measured under pulsed conditions. pulse width =300 m s. duty cycle 2% spice parameter data is available upon request for these devices for typical graphs see fmmt38a datasheet FMMTA12 fmmta13 fmmta14 c b e FMMTA12 not recommended for new design please use fmmta14
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